產(chǎn)品型號Item
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GaN-FS-10
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GaN-FS-15
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尺寸Dimensions
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10.0mm×10.5mm
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14.0mm×15.0mm
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孔洞密度Marco Defect Density
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A Level
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0 cm-2
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B Level
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≤ 2 cm-2
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厚度Thickness
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Rank 300
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300 ± 25 µm
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Rank 350
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350 ± 25 µm
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Rank 400
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400 ± 25 µm
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晶體取向Orientation
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C-axis(0001) ± 0.5°
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TTV(Total Thickness Variation)
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≤15 µm
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彎曲度BOW
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≤20 µm
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導(dǎo)電類型Conduction Type
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N-type
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Semi-Insulating
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電阻率Resistivity(300K)
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< 0.5 Ω·cm
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>106 Ω·cm
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位錯密度Dislocation Density
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Less than 5x106 cm-2
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有效面積Useable Surface Area
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> 90%
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拋光Polishing
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Front Surface: Ra < 0.2nm. Epi-ready polished
Back Surface: Fine ground
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包裝Package
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Packaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere.
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